| abstract |
A method of forming an integrated circuit including annorganosilicate low dielectric constant insulating layer (40)nformed of a substitution group depleted silicon oxide, such asnan organosilicate glass, is disclosed. Subsequent plasmanprocessing has been observed to break bonds in such anninsulating layer (40), resulting in molecules at the surface ofnthe film with dangling bonds. Eventually, the damagedninsulating layer (40) includes silanol molecules, which resultsnin a degraded film. The disclosed method exposes the damagedninsulating layer (40) to a thermally or plasma activatednfluorine, hydrogen, or nitrogen, which reacts with the damagednmolecules to form a passivated surface for the insulating layern(40). |