http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1390971-A1

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filingDate 2002-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1390971-A1
titleOfInvention Method for removing polysilane from a semiconductor without stripping
abstract A method for removing polysilane from a semiconductor substrate without stripping during manufacture of a semiconductor device, comprising:a) coating a polysilane on a semiconductor substrate and coating a resist on the polysilane;b) patterning the resist with exposure and development;c) transferring the pattern from the resist to the polysilane using an etch process selective to the resist;d) stripping the resist;e) transferring the pattern from the polysilane to a hardmask using an etch selective to the hardmask;f) subjecting the polysilane to thermal or plasma/thermal oxidation to convert the polysilane to silica; andetching the substrate and stripping off the hard mask.
priorityDate 2001-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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