| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-935 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2001-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ccc3fe676e91a7c9ae8c6af3f6d127b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88359ab31281259f4323e6c26f694e79 |
| publicationDate |
2003-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1308992-A1 |
| titleOfInvention |
Device and method for processing substrate |
| abstract |
A substrate processing apparatus consistsnof: a processing container; a first processing gasnsupply unit and a second processing gas supply unit,ncountering each other, prepared on both sides of ansubstrate-to-be-processed to the processingncontainer; and a first slit-shaped exhaust openingnand a second slit-shaped exhaust opening providednone on each side of the substrate-to-be-processednapproximately perpendicular to the flow of the firstnprocessing gas and the second processing gas,ncountering the first processing gas supply unit andnthe second processing gas supply unit, respectively.nThe first processing gas is passed along the surfacenof the substrate-to-be-processed from the firstnprocessing gas supply unit to the first exhaustnopening, and is adsorbed by the surface of thensubstrate-to-be-processed. Then, the secondnprocessing gas is passed along the surface of thensubstrate-to-be-processed from the second processingngas supply unit to the second exhaust opening, thensecond processing gas reacts with molecules of thenfirst processing gas previously adsorbed, and a highndielectric film of a single-molecule layer is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2231896-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1593755-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1705699-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1705699-A4 |
| priorityDate |
2000-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |