| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc05229904be2987713acc8b41db7cd3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 |
| filingDate |
2001-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3555e88b309e951da8e60b041d2a600
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5323568b1704f5b88a8b3cc6c5998325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b615314e4283445004f1cd3a3ceb356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_215c62f94401968f997fb61862076150
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b952ec2db4663420182ce9cd010cf6a |
| publicationDate |
2003-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1306726-A1 |
| titleOfInvention |
Development defect preventing process and material |
| abstract |
A composition for reducing development defects comprising annacidic composition containing, for example, a surfactant appliednonto a chemically amplified photoresist coating formed on ansubstrate having a diameter of 8 inches or more. By this process,nthe surface of the resist is rendered hydrophilic and the formationnof slightly soluble layer in a developer on the surface of the resistnis prevented. In addition, by proper diffusion amount of acid fromnthe composition for reducing development defects, the amount ofnreduction in thickness of the chemically amplified photoresistncoating after development is increased by 10 Å to 500 Å in comparisonnwith the case of not applying the composition for reducingndevelopment defects to form a resist pattern not having andeteriorated pattern profile such as T-top or round top. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006051766-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7799513-B2 |
| priorityDate |
2000-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |