| abstract |
A semiconductor device, enabling reliable electricalnconnection of a main electrode pad with anninterconnection pattern without separate provision of anvia use electrode pad in addition to the existing mainnelectrode pad, provided with a silicon substraten(semiconductor substrate), an electronic elementnformation layer formed on one surface of that siliconnsubstrate, an electrode pad having an extension andnelectrically connected to the electronic elementnformation layer, a through hole passing through thenelectrode pad and the silicon substrate, an SiO 2 filmn(insulating film), a via hole provided in the SiO 2 filmnon the extension of the electrode pad, and anninterconnection pattern electrically leading out thenelectrode pad to the other surface of the siliconnsubstrate through the through hole and via hole, saidnthrough hole having a diameter larger at a portionnpassing through the electrode pad than a portion passingnthrough the semiconductor substrate. |