http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1238419-A1

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filingDate 2000-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a6fb78d645dfc532cf8819d34132cd1
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publicationDate 2002-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1238419-A1
titleOfInvention Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
abstract A method and apparatus for etching of a substrate comprising both a polysilicon layer and an overlying tungsten layer. The method comprises etching the tungsten layer in a chamber using a plasma formed from a gas mixture comprising a fluorinated gas (such as CF4, NF3, SF6, and the like) and oxygen.
priorityDate 1999-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.