| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2000-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d56bb609991a83be2e464bb762317409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a80dcb277ce57b3acd8e0dfeb725e1a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_305d0f7f40adeeb45a701fff931984ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95145ce01c4b982de26a7418c0712dfd |
| publicationDate |
2002-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1225621-A1 |
| titleOfInvention |
Method of etching |
| abstract |
A method of etching prevents micro trenching without using annetch stop. Organic film on a wafer (W) placed in a hermetically sealednprocess chamber filled with process gas is etched. The gas includes N 2 nand H 2 , and the pressure in the process chamber is substantiallyn500-800 mTorr. When the process gas includes at least nitrogen atomsnand hydrogen atoms under a pressure substantially higher than 500nmTorr in the process chamber, micro trenching can be preventednwithout using an etch stop. Mask selectivity is also improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101866846-B |
| priorityDate |
1999-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |