| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e18df6b8ebc657114a3e5b7b3cdffb2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09b4a036b0f6182f8a981ca400f6c01a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d05cb50532cdb9377a1928eef4b29e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2601ae095f44d146f98acdfef2fcfa |
| publicationDate |
2002-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1199743-A2 |
| titleOfInvention |
Method of fabricating a stack consisting of a layer of Si3N4 topped by a layer of SiO2 on a semiconductor substrate |
| abstract |
A method of fabricating a stack consisting of a layer ofnSi 3 N 4 topped by a layer of SiO 2 on a semiconductor substrateninvolves depositing the layer of Si 3 N 4 on the semiconductornsubstrate in a reactor in a NH 3 and bis(tert.-butylamino)silanenatmosphere at a temperature of 600 ton650°C and a pressure of 40 to 53 Pa and then depositing thenlayer of SiO 2 on the layer of Si 3 N 4 in the same reactor innan O 2 and bis(tert.-butylamino)silane atmosphere at antemperature of 600 to 650°C and a pressure of 40 to 53 Pa. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03025248-A1 |
| priorityDate |
2000-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |