http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1143496-A1

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filingDate 1999-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03bd1fe7feec95c23e8c70af52a846d0
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publicationDate 2001-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1143496-A1
titleOfInvention Plasma etching method
abstract A wafer W is placed on a lower electrode 106 provided inside anprocessing chamber 102 of an etching apparatus 100 and a gasncontaining C4F8 is induced into the processing chamber 102. Ancontroller 112 implements control to apply 27MHz power to an uppernelectrode 114 from a plasma generating power supply 120 and tonintermittently apply 800KHz power to the lower electrode 106 from anbiasing power supply 108. While the biasing power is on, anninsulating film 202 constituted of SiO2 at the wafer W is etched,nwhereas a polymer (protective film) 208 is formed at a photoresist filmn206 while the biasing power is off. Adopting the above method,ncontact holes achieving a specific shape can be formed by improvingnthe selectivity of the insulating film relative to the photoresist film.
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priorityDate 1998-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.