| abstract |
A semiconductor device using, e.g., a fluorine containingncarbon film, as an interlayer dielectric film is produced by andual damascene method which is a simple technique. n After an dielectric film, e.g., an SiO 2 film 3, is depositednon a substrate 2, the SiO 2 film 3 is etched to form a via holen31 therein, and then, a top dielectric film, e.g., a CF film 4,nis deposited on the top face of the SiO 2 film 3. If the CF filmnis deposited by activating a thin-film deposition material havingna bad embedded material, e.g., C 6 F 6 gas, as a plasma, the CF filmn4 can be deposited on the top face of the SiO2 film 3 whileninhibiting the CF film from being embedded into the via hole 31.nSubsequently, by etching the CF film 4 to form a groove 41 therein,nit is possible to easily produce a dual damascene shape whereinnthe groove 41 is integrated with the via hole 31. |