http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1108263-A1

Outgoing Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
filingDate 2000-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99528e27714952b5e9f4dd7d16e580bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fad7028129f8a6803d505860fc2c779
publicationDate 2001-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1108263-A1
titleOfInvention Elevated stationary uniformity ring
abstract A plasma processing reactor (300) for processing a semiconductor substrate (312) is disclosed. The apparatus includes a chamber (302). Additionally, the chamber (302) includes a bottom electrode (314) that is configured for holding the substrate. The apparatus further includes a stationary uniformity ring (350) that is configured to surround the periphery of the substrate. Furthermore, the stationary uniformity ring is coupled to a portion of the chamber and disposed above the bottom electrode in a spaced apart relationship to form a vertical space (354) above the bottom electrode. Further, the vertical space is configured to provide room for ingress and egress of the substrate. Also, the stationary uniformity ring has a thickness (380) that substantially reduces diffusion of a first species from outside the stationary uniformity ring toward an edge of the substrate.
priorityDate 1999-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 21.