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filingDate 1999-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d97f19230d671c7bb1de2d5c76a77ee
publicationDate 2007-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1099244-B1
titleOfInvention Method for anisotropic etching
abstract There is disclosed a method of treating a substrate material or a film present on the material surface comprising cyclically performing the following steps: (a) etching the material or film; (b) depositing or forming a passivation layer on the surfaces of an etched feature; and (c) selectively removing the passivation layer from the etched feature in order that the etching proceeds in a direction substantially perpendicular to the material or film surface. At least one of the steps (a) or (b) is performed in the absence of a plasma. Also disclosed is an apparatus for performing the method.
priorityDate 1998-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 44.