http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1087421-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate | 2000-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_762bdb614149b9cc64b63cda55cccc42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5c99e567efb1feb75bdaf9083209283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2995be705a225b6335e179ae39057393 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79474da250df1efe7e8646d985371765 |
| publicationDate | 2001-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1087421-A3 |
| titleOfInvention | Method and apparatus for providing a stable plasma |
| abstract | In accordance with the present invention, process parameters are controlled to provide a stablenetch plasma. We have discovered that it is possible to operate a stable plasma with a portionnof the power deposited to the plasma being a capacitive contribution and a portion of thenpower deposited being an inductive contribution. In particular, a stable plasma may be obtainednwithin two process regions. In the first region, the gradient of the capacitive power tonthe power applied to the inductively coupled source for plasma generation [δ P cap /δ P RF ] isngreater than 0. In the second region, plasma stability is controlled so that [δ P cap /δ P RF ] isnless than 0 and so that P cap << P RF . Typically, P cap is less than about 10 % of P RF . In addition,nin a plasma processing apparatus having a dual power control, at a given application of powernto the plasma generation source, the stability of the plasma is extended by increasing the pressurenin the etch process chamber. This enables operation of the etch process using lowernpower application for plasma generation. The stable plasma operating regime is overlaid uponnother process parameters to obtain the desired etch results, to provide a reliable manufacturingnprocess. Operation of the etch process in a stable plasma region enables use of a timed etchnend point. For example, during etching of a silicon-containing layer, it is possible to use annetchant plasma which provides rapid etching and etch selectivity relative to adjacent layersnduring a first, timed etch portion of the etch process, and a different etchant plasma during anfinal emissions monitored etching to an underlying substrate interface. In addition, the stablenplasma assists in the etching of doped and undoped silicon and polysilicon substrates at substantiallynthe same rate, while providing for a clean etch process. |
| priorityDate | 1999-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.