| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2000-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4f528b3ce4815dfa1cb52033355be65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb11330103ddf8bf543c3a546500fc6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_307afcd7160ec9f7145ab4791e8f4d4b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50c87c2689d161fe5c50ed636b248a24 |
| publicationDate |
2001-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1081754-A2 |
| titleOfInvention |
Cleaning contact area with successive fluoride and hydrogen plasmas |
| abstract |
A method of cleaning a contact area (17) of ansemiconductor or metal region (12) on a substrate ofnan electronic device. First, the contact area isncleaned by exposing the substrate to a plasma thatnincludes fluorine-containing species (102). Second,nthe substrate is exposed to a second atmosphere thatnscavenges fluorine (103) preferably formed by a plasmandecomposition of a hydrogen-containing gas. Thensecond atmosphere removes any fluorine residuenremaining on the contact area and overcomes any neednto include argon sputtering in the cleaning process.nAnother aspect of the invention is a method ofndepositing a refractory metal over a contact area of ansemiconductor region on a substrate. The contact areanis cleaned according to the two-step process. Then anrefractory metal (52) is deposited over the contactnarea. The two-step cleaning process can reduce thenelectrical resistance between the refractory metal andnthe semiconductor region. Furthermore, if thensubstrate is annealed (104) to interdiffuse atoms ofnthe semiconductor material and the refractory metal,nthe two-step cleaning process can reduce the annealntemperature required to achieve a desired lownelectrical resistance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793104-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941108-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9613825-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804099-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02103783-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957514-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02103783-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8435895-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106373868-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011379-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10679848-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133180-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646198-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741458-B2 |
| priorityDate |
1999-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |