| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J3-02 |
| filingDate |
1999-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99c4188206f44f6c648b09bd96fbf6f3 |
| publicationDate |
2001-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1073779-A1 |
| titleOfInvention |
Reduced impedance chamber |
| abstract |
A reduced impedance chamber for plasma processing leads to operational advantages including a plasma sheath voltage that is substantially independent of plasma impedance over a range of plasma impedances. The design of such a reduced impedance chamber includes a chuck assembly (30), a counter electrode and a plasma source. The chuck assembly (30) allows mounting of a workpiece (32) for processing and includes a driven electrode and a grounded portion (31). The plasma source (36) operates to generate a plasma in the chamber from process gas. A wall portion of the plasma source (36) is directly electrically connected to the counter electrode and to the ground portion (31) of the chuck assembly (30). The counter electrode may include an inject-exhaust plate that is mounted in a position opposed to the chuck assembly (30) and that operates to inject process gas into the chamber and to exhaust effluent. |
| priorityDate |
1998-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |