| abstract |
A method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of F-CO-[(CR1R2)m-CO]n-F and F-CO-R3-CO-F, and wherein: m = 0, 1, 2, 3, 4, or 5; n = 1; R?1 and R2¿ represent H, F or C¿x?HyFz; wherein: x = 1 or 2; and y+z =2x+1; R?3¿ represents CR?4 = CR5, R6R7¿C = C or C C; wherein: R4-7 represent H, F, or C¿x?HyFz; wherein: x = 1 or 2; and y+z = 2x+1; and also including the cleaning of a surface by use of an etchant compound, and further including an etching composition which includes said etchant compound and also an etchant-modifier. |