http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1042798-A1

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filingDate 1998-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2000-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1042798-A1
titleOfInvention Etching process for organic anti-reflective coating
abstract A process for selectively removing an anti-reflective coating (ARC) (18) in the manufacturing of semiconductor integrated circuits using an oxygen-free plasma of one or more fluorine containing compounds, chlorine and an optional inert carrier gas. The process renders effective etching of the anti-reflective coating while maintaining dimensional control of a previously etched photoresist (12).
priorityDate 1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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