Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd679c6130b5c48cc24d40ba04124b56 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-3455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-02 |
filingDate |
1998-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b38018bacd88aabdaa9024ffb960187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec127187a1227ad5fd662a90aa12be35 |
publicationDate |
2000-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1029343-A1 |
titleOfInvention |
ELIMINATION OF THE TITANIUM NITRIDE FILM DEPOSITION IN TUNGSTEN PLUG TECHNOLOGY USING PE-CVD-Ti AND IN-SITU PLASMA NITRIDATION |
abstract |
An effective barrier layer to chemical attack of fluorine during chemical vapor deposition of tungsten from a tungsten fluoride source gas is fabricated by the present invention. A titanium nitride conformal barrier film (140) can be formed by in-situ nitridation of a thin titanium film (136). The substrate (28) is placed in a module (20) wherein the pressure is reduced and the temperature raised to 350 °C to about 700 °C. A titanium film (136) is then deposit by plasma-enhanced chemical vapor deposition of titanium tetrahalide and hydrogen. This is followed by formation of titanium nitride (140) on the titanium film (136) by subjecting the titanium film (136) to a nitrogen containing plasma (141) such as an ammonia, an N2 or an NH3/N2 based plasma (141). Tungsten (142) is then deposited on the film of titanium nitride (140) by plasma-enhanced chemical vapor deposition. All the titanium deposition and nitridation steps may be conducted in the same processing module (20) without removing the substrate (28) from the module (20) until the reaction steps are completed. The tungsten deposition step may be preformed in a separate processing module or in the module (20) used to deposit and process the titanium. |
priorityDate |
1997-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |