| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6623826fb005ec2357960fdc6dcc8490 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0383
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
2000-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc2b9e35cb9676d971fcdd1d95672cfe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c77bcb104f45717bd8a8938cfe5bb68a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93b0e0d8ced218a50dbece13fa6dbe0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3840e8df4d805dc27e6c5a32f922077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dd81108ec170dcd2013979a1a3a38bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ce7ac5b255565e42a5657e7cc2928b7 |
| publicationDate |
2005-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1026740-A3 |
| titleOfInvention |
Formation of isolation layer over trench capacitor |
| abstract |
A method for controlling isolation layer thickness in trenches fornsemiconductor devices includes the steps of providing a trench (14) having a conductivenmaterial (24) formed therein, forming a liner (36) on sidewalls of the trench above thenconductive material, depositing a selective oxide deposition layer (40) on the conductivenmaterial and the sidewalls, the selective oxide deposition layer selectively growing at annincreased rate on the conductive material (24) than on the liner (36) of the sidewalls and antop surface (43) and removing the selective oxide deposition layer except for a portion inncontact (42) with the conductive material (24) to form an isolation layer on the conductivenmaterial in the trench. The present invention advantageously employs a sub-atmospheric chemicalnvapor deposition (SACVD) process to deposit an oxide within the deepntrench where the sidewalls have been lined with a nitride layer. ThenSACVD oxide is an ozone activated TEOS process which grows selectivelynat a deposition rate of about 5 times greater on silicon than onnnitride. |
| priorityDate |
1999-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |