| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
1999-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_868169805f15ec9bba97ab7cfde73a02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ffb8b429e906a4cb3f35246a94a7f06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5b1f7bd3d493b0ccbdff616800fb3be |
| publicationDate |
2000-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1017096-A2 |
| titleOfInvention |
Method of fabricating semiconductor memory device |
| abstract |
A method of fabricating a semiconductor memory devicencomprises the steps of: (a) forming an interlayer insulating film on ansemiconductor substrate, opening a contact hole in said interlayerninsulating film, and burying a plug in said contact hole; (b) forming anfirst insulating film on said interlayer insulating film inclusive of saidnplug, and forming a trench in said first insulating film above said plug;n(c) forming a first conductive film on said first insulating film inclusive ofnsaid trench, and etching back said first conductive film by a chemicalnmechanical polishing method to form a bottom electrode inside saidntrench; (d) forming a high dielectric film or a ferroelectric film and ansecond conductive film in this order on said first insulating film inclusivenof said bottom electrode; and (e) patterning simultaneously said highndielectric film or ferroelectric film and said second conductive film tonform a capacitor insulating film and a top electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6881643-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1150340-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19950540-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19950540-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6686265-B2 |
| priorityDate |
1998-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |