| abstract |
A semiconductor device (1) is provided with patternednwirings (12) connecting electrode terminals (2) of ansemiconductor element to external connection terminals (18)nfor electrical connection of the semiconductor device tonexternal circuits. The patterned wirings (12) are formednby forming a film of a first metal (6) on which it isndifficult to deposit an electrolytic plating film. Formingna film of a second metal (7) on the film of the firstnmetal, and a resist pattern (8) on the film of the secondnmetal (7). Forming a patterned first plating film (9)nusing the resist pattern (8) as a mask, removing the resistnpattern (8) and the film of the second metal (7) to exposenthe film of the first metal (6) and the sides of the secondnmetal (7) left under the first plating film (9).nElectrolytically plating the first plating film (9) and thenexposed sides of the film of the second metal (7)nthereunder with a metal to form a second plating film,n(10,11) and removing the exposed film of the first metaln(6) using the second plating film (10,11) as a mask.nPreferably, the first metal (6) is titanium, chromium,ntungsten or an alloy of titanium and tungsten. |