| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_284607f933f685523d71cb13e57dd17e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_30208fce9ca36e03cb3cb8a1259170bc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
1999-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_718570110505ea1a38e9f246daec867b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c6aa0546de6551bd6707aef40053e99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5771ad4e72414342dc19de9db486b2f2 |
| publicationDate |
2000-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0975016-A1 |
| titleOfInvention |
Wafer flattening process and system |
| abstract |
A wafer flattening process and system enables anreduction of the surface roughness of a wafer resulting fromnlocal etching. A silicon wafer (W) is brought into closenproximity to a nozzle portion (20) to feed SF 6 gas to annalumina discharge tube (2), a plasma generator (1) is used toncause plasma discharge and spray a first activated speciesngas from the nozzle portion (20) to the silicon wafer (W)nside, an X-Y drive mechanism (4) is used to make the nozzlenportion (20) scan to perform a local etching step. Then thensilicon wafer (W) is moved away from the nozzle portion (20)nand O 2 gas and CF 4 gas are fed to the alumina discharge tube.nAt this time, the O 2 gas is set to be greater in amount thannthe CF 4 gas. When this mixed gas is made to discharge tongenerate plasma, a second activated species gas diffuses fromnthe nozzle portion (20) to the entire surface of the siliconnwafer (W). Since there is a larger amount of O radicals thannF radicals, the reaction product resulting from the Onradicals deposit in fine depressions causing roughness andnthe front surface of the silicon wafer (W) is smoothed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0042632-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1229575-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1229575-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6451217-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100478203-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1100117-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1100117-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6875701-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1237179-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1054443-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1054443-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03090275-A1 |
| priorityDate |
1998-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |