http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0957512-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1999-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e46accd4acaa969c6fbe05918abed98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdc216992fbafc0d6cffd59d79758fd1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3aad2d8ff8ff44c139aa42b8323fba9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe73c235924ef477de0d0b0483ecdd9b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c56076cc4a2d37806062c152898f1243 |
| publicationDate | 2000-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0957512-A3 |
| titleOfInvention | Treatment of conductive lines in semiconductor device fabrication |
| abstract | A method for removal of post reactive ion etchnsidewall polymer rails on a Al/Cu metal line of ansemiconductor or microelectronic composite structurencomprising:n 1) supplying a mixture of an etching gas and annacid neutralizing gas into a vacuum chamber in whichnsaid composite structure is supported to form a waternsoluble material of sidewall polymer rails left behindnon the Al/Cu metal line from the RIE process; removingnthe water soluble material with deionized water; andnremoving photo-resist from said composite structure byneither a water-only plasma process or a chemical downnstream etching method; or 2) forming a water-only plasma process to stripnthe photo-resist layer of a semiconductor or microelectronicncomposite structure previously subjected tona RIE process;n supplying a mixture of an etching gas and an acidnneutralizing gas into a vacuum chamber on which saidnstructure is supported to form a water soluble materialnof saidwall polymer rails left behind on the Al/Cunmetal line from the RIE process; and removing the water soluble material with deionizednwater. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136794-B2 |
| priorityDate | 1998-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.