http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0954877-A1

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filingDate 1997-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e2c9dfaf7286b3eebb0e3fe8f2defae
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publicationDate 1999-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0954877-A1
titleOfInvention Methods for reducing plasma-induced charging damage
abstract A method in a high density plasma chamber for protecting a semiconductor substrate from charging damage from plasma-induced current through the substrate while etching through a selected portion of a conductive layer above the substrate. The method includes performing a bulk etch at least partially through the selected portion of the conductive layer using a first power setting form a plasma generating source of the high density plasma chamber. The method further includes performing a clearing etch through the selected portion of the conductive layer using a second power setting for the plasma generating source. In accordance with this embodiment, the second power setting is subtantially minimized to reduce the charging damage.
priorityDate 1996-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.