| abstract |
A structure is formed in an integrated circuit tonprovide for the coupling of elements in the integratedncircuit. The structure extends form a conductivensurface through a channel extending above thenconductive surface. The structure includes a layer ofna refractory metal, a layer of a metal nitride, and anlayer of a metal. The layer of the refractory metalnis deposited on the conductive surface and inner wallsnof the channel. The layer of the metal nitride isnformed on the layer of the refractory metal. Thenlayer of the metal nitride has a thickness extendingnfrom the layer of the refractory metal of less thann130 Å. The layer of the metal is deposited on thenlayer of the metal nitride. |