| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0f8dc752059a228fada0efdcc2901b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-12 |
| filingDate |
1998-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7c42fb75b3ab5a33c35a183931f1f84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc761ca9108c4e37291f59fcd7dec7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeef6159a7cad42a22212349ce214981
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55894e3c320ebc168512d06d3d0da0e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bcf14a57385219a0ac70c6dc5ab5cf1 |
| publicationDate |
1999-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0860462-A3 |
| titleOfInvention |
Composition and method for the formation of silica thin films |
| abstract |
The claimed invention pertains to a composition that forms silica thin films,nwherein said composition performs well as a planarizing coating when applied to ansubstrate and is subsequently converted by exposure to high-energy radiation. Thenresultant silica thin films have excellent electrical insulating performance. Saidncomposition comprises (A) a hydrogen silsesquioxane resin that contains at least 45nweight % of a hydrogen silsesquioxane resin with a molecular weight no greater thann1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), andnthen converting at least a portion of the hydrogen silsesquioxane resin (A) to silica bynexposing coated substrate to high-energy radiation. The preferred substrate is ansemiconductor substrate having at least one electrically conductive layer. |
| priorityDate |
1997-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |