| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1997-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cac5d99575602c80d6edb7035524e0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de5757854ea0cf9342fff36f249988fd |
| publicationDate |
1998-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0849789-A2 |
| titleOfInvention |
Method of etching a multilayer IC dielectric structure |
| abstract |
A method of etching an integrated circuit structure innwhich the gas flows into the etch plasma are changed toncompensate for the change in the etch chemistry which occursnwhen deep features (high aspect ratio) or multilayer structuresnare etched. This innovative process divides the etch intonmultiple steps and changes the etch parameters during each stagenof the etch in response to the materials being etched duringnthat stage of the etch. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6660656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1059664-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6815373-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6340435-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6943127-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6593247-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6784119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6806207-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6730593-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6537929-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6211092-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0003432-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6511903-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6936309-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6858153-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6541282-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6399511-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7153787-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6531398-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115060755-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6562690-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6669858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6511909-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6800571-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1059664-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7227244-B2 |
| priorityDate |
1996-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |