| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1997-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dd330202c73201b4778d62e05f281a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3285afb4d2da4a4283ee8fb7620dd0ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d86a3a302ae5aceda57ae4346288c542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa67da6c0790d93182fb5aad62efa6ca |
| publicationDate |
1998-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0848416-A1 |
| titleOfInvention |
An etch process |
| abstract |
A method for etching a semiconductor device (10) havingnBARC layer (22) and nitride layer (20) includes etching BARCnlayer (22) until reaching a first set point in the fabricationnreaction chamber and then etching nitride layer (20) in-situnthe fabrication reaction chamber immediately following etchingnBARC layer (22). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02075796-A1 |
| priorityDate |
1996-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |