| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04 |
| filingDate |
1997-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_284aef6f73aa4f118e6ab6bc6e587118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ea8d90469aaa19efb3dddac7a8b2d19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34fbbc1bfd7dd994910c27b73897a009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d9e8c536eededfbb0c6ce9d5fe8ed0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82028d8f6dc7e27b55c168e1b34b30d2 |
| publicationDate |
1998-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0846786-A2 |
| titleOfInvention |
Modified physoical vapor deposition chamber and method of depositing materials at low pressure |
| abstract |
A conventional sputtering chamber (100) isnmodified by providing a target extension (102) thatnsurrounds the plasma region (110) and confinesnelectrons to the plasma. This enhancement ofnconfinement of the plasma reduces the pressure needednto maintain the plasma. At low pressures, reducednscattering of sputtered species takes place and morensputtered particles arrive vertically at the substraten(108), improving the filling of high aspect rationopenings in the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8700910-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2375117-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02053796-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SG-93270-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2375117-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9077523-B2 |
| priorityDate |
1996-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |