http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0836219-A2

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filingDate 1997-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1998-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0836219-A2
titleOfInvention Active shield for generating a plasma for sputtering
abstract A plasma chamber (100) in a semiconductornfabrication system eliminates the need for magnetronnsputtering. n Referring first to Figs. 1-2, a plasma generatornin accordance with an embodiment of the presentninvention comprises a substantially cylindrical plasmanchamber (100) which is received in a vacuum (102)n(Fig.2). The plasma chamber (100) of this embodimentnhas a single turn helical coil (104) which is carriedninternally of the vacuum chamber walls (108) (Fig.2)nby a chamber shield (106). The chamber shield (106)nprotects the interior walls (108) (Fig.2) of thenvacuum chamber (102) from the material being depositednwithin the interior of the plasma chamber (100). n Radio frequency (RF) energy from an RF generatorn(404) is radiated from the coil (104) into theninterior of the plasma chamber (100), which energizesna plasma within the plasma chamber (100). An ion fluxnstrikes a negatively biased, magnetron-free targetn(110) positioned above the plasma chamber (100). Nonmagnetron magnets are disposed above the magnetron-freentarget (110). The plasma ions eject materialnfrom the magnetron-free target (110) onto a substraten(112) which may be a wafer or other workpiecensupported by a pedestal (114) at the bottom of thenplasma chamber. It has been found that high densitynplasmas produce sufficient ionization to provide for anhigh deposition rate of target material onto ansubstrate, which allows for the elimination ofnmagnetron magnetic fields and the attendant magnetronnmagnets. By eliminating the magnetron, the uniformitynof the deposition of target material onto a workpiecencan also be improved. In addition, the sidewall ncoverage of trench-like structures and contact holesnand the like can also be increased. Furthermore, thenrate of the deposition of target material onto anworkpiece can be the same or better than thatnobtainable using magnetron sputtering.
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