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filingDate 1997-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1997-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0807968-A2
titleOfInvention Etching a metal silicide with HC1 and chlorine
abstract Metal silicide is removed at a faster rate than polysilicon in dry etching of metal silicide/polysilicon composites with an etching gas made from HCl and Cl 2 at a volumetric flowrate ratio of HCl:Cl 2 within the range of 3:1 to 5:1.
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