| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_696ca0ae93d5cf5a686273601361781f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
1997-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dc71524a5626c24b6e7cd68b114eb94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b979bcb3cd6cd4103f5a1dd01ac6487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9581686b6f8593f07d39816ba26c9ea |
| publicationDate |
1997-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0801422-A2 |
| titleOfInvention |
Removing agent composition for a photoresist and process for producing a semiconductor integrated circuit |
| abstract |
A removing agent composition for a photoresist comprising 0.01 to 20 % by weight of a quaternary ammonium hydroxide, 1 to 80 % by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20 % by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition. n A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7543592-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2793952-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0072369-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006050323-A1 |
| priorityDate |
1996-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |