| abstract |
This application discloses methods for making electron emitters using commercially available diamond particles treated to enhance their capability for electron emission under extremely low electric fields. Electron emitters comprising ultra-fine (5-10,000 nm) diamond or diamond-coated particles are activated by a hydrogen plasma treatment to produce electron emission current density of at least 0.1 mA/mm 2 at low electric fields below 8 V/µm. Emitters are preferably fabricated by plasma activating the ultra-fine diamond or diamond-coated particles, preferably in the nanometer size range, then applying the particles either as a suspension in a solution or as dry particles, with an optional baking process to improve particle adhesion, onto a conducting substrate such as n-type Si or metal. |