| abstract |
In a device for etching thin layers, preferably indium tin oxide layers on glass substrates in a vacuum chamber (2), with a plasma source (12) arranged above it, a substrate carrier (5) opposite it and with one with the substrate carrier ( 5) connected high-frequency source (8), as etching gas Cl₂ or Cl₂ and H₂ or CH₄ can be let into the vacuum chamber (2), the high-frequency bias supply (8, 9) of the substrate carrier (5) being adjustable independently of the etching particle density and wherein the plasma source (12) is fed by a separate high-frequency source (16) which has its own matching network (17). |