| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24521 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00619 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1993-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1913b5a6392a671d65256ffd3dde956
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8df6caf3043d2c1e4d8720b0f332744c |
| publicationDate |
1994-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0625285-A1 |
| titleOfInvention |
Method for anisotropically etching silicon |
| abstract |
The invention relates to a method for anisotropically attacking structures delimited with an attack mask, preferably recesses whose sides are exactly delimited, by means of a plasma. According to this process, both a high selectivity of the mask and a very strong anisotropy of the attacked structures are obtained. To this end, this anisotropic etching process comprises the successive separate and alternating polymerization and etching operations. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103606534-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103606534-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8354033-B2 |
| priorityDate |
1992-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |