Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_040ec81c891acc3f3186f56cb99cf161 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-90 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
1993-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d2a37c343c275daacbc2abf620572e3 |
publicationDate |
1993-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-0559323-A2 |
titleOfInvention |
Improved method of patterning a submicron semiconductor layer |
abstract |
An interlevel dielectric layer (24,26) is formed over the surface of the integrated circuit. A substantially planarizing layer (30) is formed over the interlevel dielectric layer (24,26). A photoresist layer (32) is formed and patterned over the planarizing layer (30). The planarizing layer (32) is etched to form openings (34) exposing selected portions of the interlevel dielectric layer (26,24), wherein each opening (24) has substantially the same lateral dimensions. The photoresist (32) and planarizing layers (26,24) are then removed. The interlevel dielectric layer (24,26) is etched in the openings to expose portions of the underlying integrated circuit. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9704319-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0019534-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6239026-B1 |
priorityDate |
1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |