| abstract |
Method used to attack and reform by growth of III-V compounds in a clearly defined vertical configuration. A Fabry-Perot cavity laser structure comprising spacing regions (16, 20), interference mirrors (14, 22), and a quantum well layer (18) is formed by epitaxial growth using a molecular beam. Then a tungsten mask (24) defines the areas of a laser matrix which are attacked by a chemically assisted ion beam to obtain high elongation colonettes. A second thermal attack of chlorine gas removes part of the side walls without attacking the tungsten, thereby eliminating deterioration by ion beam, and creating a tungsten rim (26). A chemical deposit of organo-metallic vapor grows III-V materials by growth (28) and can quickly flatten the columns. The tungsten rim facilitates flattening by preventing the growth film from protruding from the top of the baluster. The growth reforming material can be insulating, and contain conductive laser contacts, or provide modulated index guidance in the laser device. |