http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0554123-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_040ec81c891acc3f3186f56cb99cf161 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate | 1993-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d2a37c343c275daacbc2abf620572e3 |
publicationDate | 1993-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0554123-A1 |
titleOfInvention | A method for forming a contact |
abstract | A thin layer of material (16) is deposited over an interlevel dielectric (14), which may be a planarizing interlevel dielectric. The thin layer (16) is a material which can be etched highly selectively over the material used for the interlevel dielectric (14), and acts as a hard mask for the interlevel dielectric layer (14). A thin layer of resist (18) is formed over the hard mask layer (16) and used to pattern the hard mask layer (16). The hard mask layer (16) is then used as a pattern for etching contact vias (20) through the interlevel dielectric (14). After via (20) formation, underlying conductive regions (12), at the bottom of the contact vias (20), are protected during removal of the hard mask layer (16) by refilling the contact openings with a second resist layer (24). This technique provides improved resolution due to the thin photoresist layer which is used to define device features, while adequately protecting. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100458360-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0797242-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0797242-A3 |
priorityDate | 1992-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.