| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e0fc105cdaa6fc6208bcc48eadab50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1992-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c930de552b60a334019878f9bfdbd128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_592041feb40702df2bef42e70d70195e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dca7257c30065d96a477ed54260cbe2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b224c06a7ff0c0487ea0e25cb141ce5 |
| publicationDate |
1993-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0537720-A1 |
| titleOfInvention |
A method for ashing a photoresist resin film on a semiconductor wafer and an asher |
| abstract |
The object of the invention is to provide an ashing method and an asher, in order to avoid the damage to semiconductor components occurring during the ashing of a photoresist resin film by active oxygen plasma and to avoid the long treatment time occurring in an ashing method using a low pressure mercury discharge lamp. According to the invention this object is achieved by a method and an apparatus for ashing a photoresist resin film, in which a wafer provided with a photoresist resin film is placed in an ozone-containing atmosphere, an activated oxygen is produced through the radiation light of a discharge lamp, which emits a continuous spectrum in a wavelength range of 200 to 300 nm and the photoresist resin film is ashed by the activated oxygen. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2715742-A1 |
| priorityDate |
1991-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |