| abstract |
In thin film capacitor in which a lower electrode (2), a dielectric film (3) and an upper electrode (4) are formed in order on a substrate, both the lower and upper electrodes are respectively formed with a first conductive layer (2a,4a) made of Ti, Ta, Mo and W and a second conductive layer (2b,4b) made of Pt, Pb, Rh and Al in this order from the substrate. In addition, a conductive metal oxide film made of PbO and others is formed, as required, at least between the lower electrode and the dielectric film or between the upper electrode and the dielectric film. |