| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1991-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fdb4ad2843eeb9bc55c5d43ecf9ba34 |
| publicationDate |
1992-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0469401-A1 |
| titleOfInvention |
Method of producing a semiconductor device by dry etching a SiO2 layer |
| abstract |
(Purpose) In the production method of a semiconductor device, it is an object of the present invention to achieve a dry etching method of which the selection rate for a silicon oxide layer is low and the processing time is shorter and by which reliability and yield are improved. n (Solution) An Si0 2 layer (3) serving as a first silicon oxide layer is formed by thermal oxidation on an aluminum wiring (2) which has been formed by vapor deposition on an Si-substrate (1), and an SOG layer (4) is applied by a spinner as a second silicon oxide layer onto the Si0 2 layer (3) having a ruggedness reflecting the steps in the aluminum wiring (2). A reactive ion etching is employed as the dry etching in an etchback process. The gas to be used is a mixed gas of C 2 F 6 (carbon fluoride gas) causing a liberation of fluorine radicals F * , and Ar (an inert gas). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0893825-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0607684-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8421137-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6455444-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6211570-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2300303-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2300303-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010002634-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0607684-A3 |
| priorityDate |
1990-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |