http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0439727-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1990-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a050f9f2d94591e19fcd02f825ce15a5 |
| publicationDate | 1991-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0439727-A2 |
| titleOfInvention | Process to make grooves in silicon substrates for high density integrated circuits |
| abstract | In order to produce trench structures (3) with vertical, smooth side walls (4) and straight, flat trench bottoms (5) in silicon substrates (1), the reactive ion etching is carried out in a triode single-disc plate reactor using an etching mask (2) which preferably consists of SiO 2 and with exclusively an etching gas atmosphere consisting of chlorine in the low pressure range. Compared to known ion etching processes, a carbon-free, simple etching chemistry with acceptable etching rates is used here. The method is used in particular for the production of DRAMs with cell concepts of more than 4 Mbits. |
| priorityDate | 1990-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.