| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8e6a13e4ae501eb40decf5732cf09c6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-948 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
1990-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26f1e62081c0267e0ad61328dcdb5959
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0200aac4dbb78065342fa88c72aa2c76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_370c87e9d30018609331d4a70d0b806f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdf5237c4e94fbe103b4626ac5762dcb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f7b7602da583569860994da67b4eba5 |
| publicationDate |
1991-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0420489-A2 |
| titleOfInvention |
Compensation of lithographic and etch proximity effects |
| abstract |
In the manufacture of integrated-circuit devices, patterned features are made on a substrate by etching a deposited layer. The pattern comprises features which are closely spaced, as well as others which are more isolated. Etching is in approximate conformance with a lithographically defined resist pattern which in turn is in approximate conformance with a desired pattern. A processing parameter such as, e.g., resist layer thickness is chosen such that an etched pattern is obtained which approximates a desired pattern more closely than a lithographically defined resist pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0207201-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0207201-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6555895-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101430502-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6475884-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6576952-B2 |
| priorityDate |
1989-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |