| abstract |
An interferometric semiconductor laser with a GaAs / GaAlAs heterostructure is known. Such a semiconductor laser is constructed on the principle of the Michelson or Mach-Zehnder interferometer and offers the advantage of better side-mode suppression of the laser light compared to a laser with a Fabry-Pérot resonator.n n n The invention relates to a semiconductor laser with a controllable beam splitter (5). Three segments (1, 2, 3) with laser-active zones and a monitor diode (4) form a cross-shaped laser, which are connected to one another via the beam splitter (5). The beam splitter (5) has either a holographic grating or a partially transparent mirror, which was created by step etching. The beam splitter has electrodes via which the optical coupling between the segments (1, 2, 3) can be controlled by current injection. The laser-active zones are formed either by ridge waveguide lasers, broad-area lasers or multi-quantum well layers.n n n A semiconductor laser with two beam splitters and three monitor diodes, via which the phase, the power and the filter wavelength of the emitted laser light are regulated, is particularly advantageous. Such semiconductor lasers are suitable for optical message transmission. |