| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S428-901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-145 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1990-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a89b9e1c97eb1db231b9757cab9841e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f06b6b8099f3c5e56ef0deb5af9cd76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26e6321cc950b1fbad184b3152fb53d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dda9e414a7cc277a9099898b2c7e2c0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f094f0db25b98e1e87cca528100c3b27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78e3ba96eb9a3181398bf176e911a7e9 |
| publicationDate |
1990-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0403817-A2 |
| titleOfInvention |
Dielectric structures with material resistant to etching and method of fabrication thereof |
| abstract |
Structures containing a dielectric material (2) having a polymeric reactive ion etch (RIE) barrier (14) embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier (14) is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallocyclobutane, metallobutene and vinyl groups. The etch barrier (14) is deposited as a solvent free liquid which can fill gaps (30) between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications. |
| priorityDate |
1989-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |