http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0352940-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8e6a13e4ae501eb40decf5732cf09c6 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
| filingDate | 1989-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b952b497c93461bb4916435487aaf868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dd2ea1e0e067200241c1c0f46236a1d |
| publicationDate | 1990-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0352940-A2 |
| titleOfInvention | Method of measuring specific contact resistivity of self-aligned contacts in integrated circuits |
| abstract | A test circuit (2000) is described for measuring the specific contact resistivity r c of self- aligned electrodes contacting underlying diffused regions at a major surface of an underlying semiconductor wafer, as well as the sheet (lateral) resistance r s of the underlying diffused regions in some embodiments. The test circuit illustratively includes a pair of test MOS or other type of transistors advantageously made by a self-aligned metallization process simultaneously with the other MOS or other type of transistors to be tested. The two test transistors share a common diffused region (113), a self-aligned common controlled electrode (132) contacting a diffused region underneath it, and a common control electrode (226). During test operation, both test transistors are kept ON by means of an applied above-threshold control voltage (E g ), while a current source (20) forces current through one of the transistors. The resulting voltage (V e ), developed across the common controlled electrode (132) and the controlled electrode (133) of the other transistor is a measure of the specific contact resistivity thereat. |
| priorityDate | 1988-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708 |
Total number of triples: 21.