http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0314185-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 |
| filingDate | 1988-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cdd139ea6e212b050c54fc6f2246ed9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6cd85c87d3b442a689bf2b11adf5bb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e5757a016b81f07a0ca43b1d668bde3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c227385de57a4cdfddedb2fc25019f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32c1470ca39cf62c911baf0f607e1f77 |
| publicationDate | 1989-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0314185-A1 |
| titleOfInvention | Pattern forming method |
| abstract | The present invention provides a method of forming through exposure and development by performing an aqueous solution treatment after forming a resist. This method increases a difference in the rate of dissolving in a developer between exposed and unexposed portions on the resist. As a result, a fine, good and well-shaped pattern with an improved contrast may be obtained very simply. n The method according to the present invention is very well suited to a means for improving the contrast of a resist which includes the use of an optically fading compound layer, a far ultraviolet ray radiation, or the like, whereby the present inventive method works more effectively. Besides, a surface active agent may be contained in said water solution. Heating may be performÂed after completion of said water solution treatment. These materials and treatments can improve the contrast of a resist by increasing a difference in rate of dissolving in a developer between unexposed and exposed portion on said resist. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5525192-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7875419-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5581531-A |
| priorityDate | 1987-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.