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filingDate 1988-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1988-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0291779-A2
titleOfInvention Heat-resistant positive resist, and process for the production of heat-resistant resist patterns
abstract Photoresists are said to be particularly suitable for high-temperature use. The new positive resists based on polybenzoxazole precursors and diazoquinones should not only be highly heat-resistant, but should also be inexpensive to produce and have a high resolving power.n n n According to the invention, the polybenzoxazole precursors are hydroxypolyamides of the following structure: where R, R *, R₁ and R are aromatic groups, and the following applies to n 1 and n 2: n₁ and n₂ = 1 to 100, with the proviso: R ≠ R * and / or R₁ ≠ R .n n n Chips, bipolar gate arrays and memories
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