http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0263374-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1987-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1991-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1991-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0263374-B1 |
| titleOfInvention | Reactive ion etch chemistry for providing deep vertical trenches in semiconductor substrates |
| priorityDate | 1986-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.