| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1987-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cd2c0c703e014908d1a9f85b1c3464c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d163e53384baa2c459b7734f5b1e35ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d782291add506f3b24115ede8e3a821a |
| publicationDate |
1988-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0263374-A2 |
| titleOfInvention |
Reactive ion etch chemistry for providing deep vertical trenches in semiconductor substrates |
| abstract |
A process for forming deep (>6µm) trenches in a silicon substrate. The substrate is etched through a silicon oxide mask in a plasma having 75%-86% HCl, 9%-16% O₂, and 1%-8% BCl₃. The resulting trenches have substantially vertical sidewalls and rounded bottom surfaces. The plasma etch is performed at high power and low pressure, so that it achieves a high aspect ratio at a minimum etch bias. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3915650-A1 |
| priorityDate |
1986-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |